Doping

Activation Energies

Table 2.2.5 Donor levels (n-type) in units of \(eV\) relative to conduction band edge

Donor Name

Energy

Source

n-As-in-Si

0.054

n-As-in-Si

0.049

American Institute of Physics Handbook, 3rd ed., McGraw-Hill, New York (1972)

n-P-in-Si

0.045

American Institute of Physics Handbook, 3rd ed., McGraw-Hill, New York (1972)

n-Sb-in-Si

0.039

n-N-in-Si

0.045

n-As-in-Ge

0.013

American Institute of Physics Handbook, 3rd ed., McGraw-Hill, New York (1972)

n-P-in-Ge

0.012

American Institute of Physics Handbook, 3rd ed., McGraw-Hill, New York (1972)

n-N-in-SiC

0.10

n-Si-in-GaAs

0.0058

n-Si-in-AlAs

0.007

300 K, Landolt-Boernstein

n-Si-in-Al0.27Ga0.73As

0.006

Landolt-Boernstein

More parameters can be found in the nextnano³ database file database_nn3.in or at this link

Table 2.2.6 Acceptor levels (p-type) in units of \(eV\) relative to valence band edge

Acceptor Name

Energy

Source

p-In-in-Si

0.16

p-B-in-Si

0.045

American Institute of Physics Handbook, 3rd ed., McGraw-Hill, New York (1972)

p-Al-in-Si

0.057

American Institute of Physics Handbook, 3rd ed., McGraw-Hill, New York (1972)

p-B-in-Ge

0.010

American Institute of Physics Handbook, 3rd ed., McGraw-Hill, New York (1972)

p-Al-in-Ge

0.010

American Institute of Physics Handbook, 3rd ed., McGraw-Hill, New York (1972)

p-Al-in-SiC

0.20

p-C-in-GaAs

0.027

Landolt-Boernstein 1982

More parameters can be found in the nextnano³ database file database_nn3.in or at this link